Memory with single-event latchup prevention circuitry

Abstract

An integrated circuit that includes an array of random-access memory cells is provided. Each memory cell may include inverting circuits formed from pull-up transistors and pull-down transistors and also access transistors coupled to the inverting circuits. The pull-up transistors may be formed in an n-well. The memory cells may also be coupled to single event latch-up (SEL) prevention circuitry. The SEL prevention circuitry may include a clamping circuit, a voltage sensing circuit, and a driver circuit. In response to a single event alpha particle strike at one of the memory cells, a temporary voltage rise may be presented at the clamping circuit. The voltage sensing circuit may detect the voltage rise and direct the driver circuit to bias the n-well into deep reverse bias region. Operated in this way, the SEL prevention circuitry can mitigate SEL while minimizing memory cell leakage.