The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Mar. 07, 2013
Applicant:

Maxim Integrated Products, Inc., San Jose, CA (US);

Inventors:

Tiao Zhou, Carrollton, TX (US);

Ricky Agrawal, Lewisville, TX (US);

Abhishek Choudhury, San Jose, CA (US);

Assignee:

MAXIM INTEGRATED PRODUCTS, INC., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/12 (2006.01); H01L 23/13 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/3192 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 24/94 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02321 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/131 (2013.01); H01L 2224/94 (2013.01); H01L 2924/14 (2013.01); H01L 2924/30101 (2013.01);
Abstract

A device and fabrication techniques are described that employ wafer-level packaging techniques for fabricating semiconductor devices that include a pad defined contact. In implementations, the wafer-level package device that employs the techniques of the present disclosure includes a substrate, a passivation layer, a top metal contact pad, a thin film with a via formed therein, a redistribution layer structure configured to contact the top metal contact pad, and a dielectric layer on the thin film and the redistribution layer structure. In implementations, a process for fabricating the wafer-level package device that employs the techniques of the present disclosure includes processing a substrate, forming a passivation layer, depositing a top metal contact pad, forming a thin film with a via formed therein, forming a redistribution layer structure in the via formed in the thin film, and forming a dielectric layer on the thin film and the redistribution layer structure.


Find Patent Forward Citations

Loading…