The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Nov. 09, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Ruei Lin, Taipei, TW;
Yen-Ming Peng, Taoyuan County, TW;
Han-Wei Yang, Hsinchu, TW;
Chen-Chung Lai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure and a method of fabricating the same are provided. The method for manufacturing a semiconductor structure includes forming a dielectric layer over a substrate and forming a first structure through the dielectric layer such that a first portion of the dielectric layer is disposed in between the first structure. The method for manufacturing a semiconductor structure further includes forming a first via hole and a second via hole through the first portion of the dielectric layer and forming a trench connecting the first via hole and the second via hole in the dielectric layer. The method for manufacturing a semiconductor structure further includes forming a conductive feature in the first via hole, the second via hole, and the trench. In addition, the first structure and the dielectric layer are made of different materials from each other.