The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Dec. 21, 2016
Power Integrations, Inc., San Jose, CA (US);
Alexei Koudymov, Ringoes, NJ (US);
Power Integrations, Inc., San Jose, CA (US);
Abstract
A semiconductor device includes a heterostructure field effect transistor (HFET) having an active region in a semiconductor film between a source electrode and a drain electrode, where a gate electrode is over a portion of the active region and is configured to modulate a conduction channel in the active region. The semiconductor device also includes a first passivation film over the active region and an encapsulation film over the first passivation film. A first metal pattern is disposed on the encapsulation film, and the first metal pattern includes a shield wrap over the majority of the active region and is electrically connected to the source electrode. A gap is defined in the first metal pattern and the gap separates the shield wrap from a portion of the first metal pattern that is connected to the drain electrode, and the gap is not formed over the active region.