The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Jan. 18, 2017
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yu-Ying Lin, Tainan, TW;

Chueh-Yang Liu, Tainan, TW;

Yu-Ren Wang, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/12 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/125 (2013.01); H01L 29/165 (2013.01); H01L 29/66439 (2013.01); H01L 29/66636 (2013.01); H01L 29/7833 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes a substrate including a first semiconductor material, a gate structure formed on the substrate, and a source stressor and a drain stressor formed in the substrate respectively in a recess at two sides of the gate structure. The source stressor and the drain stressor respectively include at least a first quantum wire and at least a second quantum wire formed on the first quantum wire. The first quantum wire includes the first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. And the second quantum wire includes the second semiconductor material.


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