The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Jun. 30, 2017
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Rohit Khare, Fremont, CA (US);
Jasmine Lin, San Jose, CA (US);
Anand Chandrashekar, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7687 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 21/76879 (2013.01); H01L 21/76889 (2013.01); H01L 27/10888 (2013.01);
Abstract
Provided herein are methods of tungsten nitride (WN) deposition. Also provided are stacks for tungsten (W) contacts to silicon germanium (SiGe) layers and methods for forming them. The stacks include SiGe/tungsten silicide (WSi)/WN/W layers, with WSiproviding an ohmic contact between the SiGe and WN layers. Also provided are methods for reducing fluorine (F) attack of underlying layers in deposition of W-containing films using tungsten hexafluoride (WF). Apparatuses to perform the methods are also provided.