The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

May. 09, 2017
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Sang Nguyen, Union City, CA (US);

Hagop Nazarian, San Jose, CA (US);

Tianhong Yan, Saratoga, CA (US);

Assignee:

CROSSBAR, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 11/419 (2006.01); G11C 8/18 (2006.01); G11C 7/10 (2006.01); G11C 11/418 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 7/062 (2013.01); G11C 7/1015 (2013.01); G11C 8/18 (2013.01); G11C 11/418 (2013.01); G11C 2211/5645 (2013.01);
Abstract

A detection circuit that can detect a two-terminal memory cell changing state. For example, in response to electrical stimuli, a memory cell will change state, e.g., to a defined higher resistance state or a defined lower resistance state. Other, techniques do not detect this state change until after the stimuli is completed and a subsequent sensing operation (e.g., read pulse) is performed. The detection circuit can detect the state change during application of the electrical stimuli that cause the state change and can do so by comparing the magnitudes or values of two particular current parameters.


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