The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jun. 19, 2017
Intel Corporation, Santa Clara, CA (US);
Pierre Doussiere, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments may relate to a multiple quantum well (MQW) laser for operating at high temperatures, comprising at least one quantum well made of compressively strained InGaAlAs layers that are alternatively stacked with tensile strained InGaAlAs layers, the at least one quantum well surrounded on one side by a n-doped InP cladding and on the other by a p-doped InP cladding so as to form a double hetero-junction. A confinement layer of lattice-matched InAlAs may be provided between the quantum well and the p-doped cladding, having a first surface facing or adjacent to the quantum well and a second surface facing or adjacent to the p-doped cladding. An additional electron containment layer of tensile strained InAlAs may be provided facing or adjacent to one surface of the confinement layer, having a thickness smaller than that of the confinement layer. Other embodiments may be described and/or claimed.