The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jul. 21, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Cheng-Ta Wu, Chiayi County, TW;
Ting-Chun Wang, Tainan, TW;
Wei-Ming You, Taipei, TW;
J. W. Wu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 29/0649 (2013.01); H01L 29/41783 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A method for manufacturing a semiconductor device is provided including forming one or more fins over a substrate and forming an isolation insulating layer over the one or more fins. A dopant is introduced into the isolation insulating layer. The isolation insulating layer containing the dopant is annealed, and a portion of the oxide layer is removed so as to expose a portion of the fins.