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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10192968 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Jan. 06, 2016

Semiconductor devices having gate structures with skirt regions

Applicants:

Jung-gun You, Ansan-si, KR;

Myung-yoon Um, Seoul, KR;

Young-joon Park, Seoul, KR;

Jeong-hyo Lee, Suwon-si, KR;

Ji-yong Ha, Seoul, KR;

Jun-sun Hwang, Suwon-si, KR;

Inventors:

Jung-Gun You, Ansan-si, KR;

Myung-Yoon Um, Seoul, KR;

Young-Joon Park, Seoul, KR;

Jeong-Hyo Lee, Suwon-si, KR;

Ji-Yong Ha, Seoul, KR;

Jun-Sun Hwang, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Yu Chen

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 21/28114 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 29/401 (2013.01); H01L 29/4238 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/28088 (2013.01); H01L 29/4966 (2013.01); H01L 29/7848 (2013.01); H01L 29/7853 (2013.01);
Abstract

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

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