The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Mar. 13, 2018
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Yan Lin Sun, Shanghai, CN;

Shou Zhu Guo, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H03K 17/687 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H03K 17/6872 (2013.01);
Abstract

A semiconductor device and its operation method, relating to semiconductor technology. The semiconductor device comprises a substrate and an active area on the substrate, wherein the active area comprises a first active area and a second active area positioned along an extension direction of the first active area, the first active area comprises a first component, a second component, and a connection component, wherein the first component and the second component each directly contact a side of the connection component, wherein the second active area comprises a third component and a fourth component being separated by a groove isolation, the groove isolation in the second active area corresponds to the connection component in the first active area. The semiconductor device further comprises a first pseudo gate covering the connection component and the groove isolation. This inventive concept reduces over-etching when forming contact components.


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