The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Mar. 26, 2018
Globalfoundries Inc., Grand Cayman, KY;
Steven M. Shank, Jericho, VT (US);
Anthony K. Stamper, Williston, VT (US);
Ian McCallum-Cook, Burlington, VT (US);
Siva P. Adusumilli, South Burlington, VT (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A non-single-crystal layer has a first section arranged beneath the trench isolation regions and a second section arranged beneath the active device region. The first section of the non-single-crystal layer has a first width in a vertical direction. The second section of the non-single-crystal layer has a second width in the vertical direction that is less than the first width of the first section of the non-single-crystal layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile