The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Jun. 13, 2014
Applicant:

Brookhaven Science Associates, Llc, Upton, NY (US);

Inventors:

Antonio Checco, Stony Brook, NY (US);

Charles T. Black, New York, NY (US);

Atikur Rahman, Ridge, NY (US);

Benjamin M. Ocko, Stony Brook, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); H01L 21/027 (2006.01); G03F 7/40 (2006.01); G03F 7/00 (2006.01); G02B 1/118 (2015.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); G02B 1/18 (2015.01);
U.S. Cl.
CPC ...
B81C 1/00 (2013.01); B81C 1/00111 (2013.01); G02B 1/118 (2013.01); G02B 1/18 (2015.01); G03F 7/0002 (2013.01); G03F 7/405 (2013.01); H01L 21/0271 (2013.01); H01L 21/0273 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); B81C 2201/0149 (2013.01); H01J 2237/334 (2013.01);
Abstract

Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.


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