The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

Mar. 02, 2016
Applicant:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Fumimasa Horikiri, Hitachi, JP;

Kenji Shibata, Hitachi, JP;

Kazutoshi Watanabe, Hitachi, JP;

Kazufumi Suenaga, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/187 (2006.01); H01L 41/27 (2013.01); H01L 41/047 (2006.01); H01L 41/43 (2013.01); H01L 37/02 (2006.01); H01L 41/316 (2013.01); H01L 41/332 (2013.01); H01L 21/304 (2006.01); C23C 14/34 (2006.01); H01L 41/29 (2013.01); H01L 41/338 (2013.01); C23C 14/35 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1873 (2013.01); C23C 14/34 (2013.01); H01L 21/304 (2013.01); H01L 37/025 (2013.01); H01L 41/0477 (2013.01); H01L 41/29 (2013.01); H01L 41/316 (2013.01); H01L 41/332 (2013.01); H01L 41/338 (2013.01); H01L 41/43 (2013.01); C23C 14/35 (2013.01); H01L 21/0209 (2013.01); H01L 21/02071 (2013.01);
Abstract

There is provided a method for manufacturing a ferroelectric thin film device including: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate on the lower electrode film; a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; and a thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step. The predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M.


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