The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Oct. 30, 2017
Win Semiconductors Corp., Tao Yuan, TW;
Cheng-Guan Yuan, Tao Yuan, TW;
Shih-Ming Joseph Liu, Tao Yuan, TW;
Hsi-Tsung Lin, Tao Yuan, TW;
Chia Hsiung Lee, Tao Yuan, TW;
WIN SEMICONDUCTOR CORP., Tao Yuan, TW;
Abstract
An InGaAlP Schottky field effect transistor with stepped bandgap ohmic contact, comprising: a buffer layer, a channel layer, a carrier supply layer, a Schottky barrier layer, an intermediate bandgap layer, a cap layer and an ohmic metal layer sequentially formed on a compound semiconductor substrate; wherein the Schottky barrier layer is made of InGaAlP; the ohmic metal layer and the cap layer form an ohmic contact. The Schottky barrier layer, the intermediate bandgap layer and the cap layer have a Schottky-barrier-layer bandgap, an intermediate bandgap and a cap-layer bandgap respectively, wherein the intermediate bandgap is less than the Schottky-barrier-layer bandgap and greater than the cap-layer bandgap.