The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Feb. 20, 2018
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Daimotsu Kato, Kawasaki, JP;
Hisashi Yoshida, Kawasaki, JP;
Jumpei Tajima, Mitaka, JP;
Kenjiro Uesugi, Kawasaki, JP;
Toshiki Hikosaka, Kawasaki, JP;
Miki Yumoto, Kawasaki, JP;
Shinya Nunoue, Ichikawa, JP;
Masahiko Kuraguchi, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/36 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/778 (2013.01);
Abstract
According to one embodiment, a semiconductor substrate includes a first semiconductor layer including AlGaN (0<x1≤1) and including carbon and oxygen, and a second semiconductor layer including AlGaN (0<x2<x1) and including carbon and oxygen. A second ratio of a carbon concentration of the second semiconductor layer to an oxygen concentration of the second semiconductor layer is 730 or more.