The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Nov. 29, 2016
Ckd Corporation, Komaki-shi, Aichi, JP;
Horiba Stec, Co., Ltd., Kyoto-shi, Kyoto, JP;
Akiko Nakada, Kasugai, JP;
Yasunori Nishimura, Kasugai, JP;
Minoru Ito, Kasugai, JP;
Masami Nishikawa, Otsu, JP;
Shigeyuki Hayashi, Kyoto, JP;
Atsushi Ieki, Kyoto, JP;
CKD CORPORATION, Komaki, JP;
HORIBA STEC. CO., LTD., Kyoto, JP;
Abstract
In a gas flow monitoring method using a MFC (a flow control device) for controlling a flow rate of process gas from a process gas supply source and supply the process gas to a predetermined process chamber, a start shut-off valve placed upstream of the MFC, and a pressure gauge placed between the start shut-off valve and the MFC, the start shut-off valve is closed and a drop of pressure on an upstream side of the MFC is measured by the pressure gauge to measure a flow rate of the MFC, thereafter, the start shut-off valve is opened to monitor the flow rate of the MFC. The MFC is switched from an ON state to an OFF state before the start shut-off valve is opened. The method enables in-line monitoring a low rate of process gas without affecting a semiconductor manufacturing process.