The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

Feb. 20, 2018
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Takahiro Yonemoto, Tokyo, JP;

Masahiro Sumiya, Tokyo, JP;

Yoshito Kamaji, Tokyo, JP;

Junya Sasaki, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C23C 16/44 (2006.01); C23C 16/50 (2006.01); C23C 16/448 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/24 (2013.01); C23C 16/4404 (2013.01); C23C 16/4405 (2013.01); C23C 16/4485 (2013.01); C23C 16/45557 (2013.01); C23C 16/50 (2013.01);
Abstract

A plasma processing method includes forming a deposition film containing silicon as a component in a processing chamber by generating a first plasma in the processing chamber; plasma etching of a sample in which a film containing a metal is formed in the processing chamber; and removing of a metal-based reaction product by generating a second plasma including an element having reducibility and halogen. The plasma processing method further includes removing the deposition film by a third plasma generated by using gas containing a fluorine element; and removing residual gas by a fourth plasma.


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