The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Oct. 06, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Jung Gil Yang, Hwaseong-si, KR;
Seung Min Song, Hwaseong-si, KR;
Sung Min Kim, Incheon, KR;
Woo Seok Park, Ansan-si, KR;
Geum Jong Bae, Suwon-si, KR;
Dong Il Bae, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing a semiconductor device is provided. A stacked structure including one or more sacrificial layers and one or more semiconductor layers are stacked on a substrate is formed. A dummy gate structure including a dummy gate and a dummy spacer on the stacked structure is formed. The stacked structure is etched using the dummy gate structure to form a first recess. The one or more sacrificial layers are etched. The dummy spacer is removed. A spacer film is formed on the dummy gate, the one or more semiconductor layer and the one or more sacrificial layers. The semiconductor layer and spacer film are etched to form a second recess using the dummy gate and spacer film. An external spacer formed on the dummy gate and an internal spacer formed on the one or more sacrificial layers are formed. A source/drain region is formed in the second recess.