The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2019

Filed:

Mar. 30, 2016
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Yu Wang, Taipei, TW;

Ming-Yin Lee, Hsinchu, TW;

Wen-Tsung Huang, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H02H 9/04 (2006.01); H01L 29/10 (2006.01); H01L 27/105 (2006.01); G11C 7/24 (2006.01); H01L 29/06 (2006.01); H01L 23/50 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0277 (2013.01); G11C 7/24 (2013.01); H01L 23/50 (2013.01); H01L 27/0629 (2013.01); H01L 27/105 (2013.01); H01L 29/0688 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H02H 9/046 (2013.01);
Abstract

An ESD protection apparatus includes a semiconductor substrate, a first gate structure, a first doping region, a second doping region and a third doping region. The semiconductor substrate has a doping well with a first conductivity one end of which is grounded. The first gate structure is disposed on the doping well. The first doping region having a second conductivity, is disposed in the doping well and adjacent to the first gate structure, and is electrically connected to a pad. The second doping region having the second conductivity is disposed in the doping well and adjacent to the first gate structure. The third doping region having the first conductivity is disposed in the doping well and forms a P/N junction interface with the second doping region, wherein the second doping region and the third doping region respectively have a doping concentration substantially greater than that of the doping well.


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