The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2019

Filed:

Mar. 17, 2016
Applicant:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Fumimasa Horikiri, Hitachi, JP;

Kenji Shibata, Hitachi, JP;

Kazutoshi Watanabe, Hitachi, JP;

Kazufumi Suenaga, Tokyo, JP;

Masaki Noguchi, Tokyo, JP;

Kenji Kuroiwa, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 41/187 (2006.01); H01L 41/316 (2013.01); H01L 41/332 (2013.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01L 41/187 (2013.01); H01L 41/1873 (2013.01); H01L 41/316 (2013.01); H01L 41/332 (2013.01);
Abstract

This method for manufacturing a niobate-system ferroelectric thin-film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film, the etch mask being an amorphous fluororesin film laminated via a noble metal film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a chelating agent; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.


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