The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Jul. 17, 2018
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventors:

Hsin-Ming Chen, Hsinchu, TW;

Meng-Yi Wu, Hsinchu County, TW;

Po-Hao Huang, Hsinchu, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H04L 9/32 (2006.01); G11C 7/06 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
H04L 9/3278 (2013.01); G11C 7/062 (2013.01); G11C 17/16 (2013.01);
Abstract

A physically unclonable function unit includes and anti-fuse transistor and a control circuit. The anti-fuse transistor has a first terminal, a second terminal, and a gate terminal. The control circuit is coupled to the anti-fuse transistor. During an enroll operation, the control circuit applies an enroll voltage to the gate terminal of the anti-fuse transistor and applies a reference voltage to the first terminal and the second terminal of the anti-fuse transistor. The enroll voltage is higher than the reference voltage, and is high enough to create a rupture path on the gate terminal to the first terminal or to the second terminal.


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