The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Oct. 12, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chao-Ching Hsieh, Tainan, TW;
Chih-Chien Liu, Taipei, TW;
Yu-Ru Yang, Hsinchu County, TW;
Hsiao-Pang Chou, Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/16 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); G11C 13/0002 (2013.01);
Abstract
A resistive random access memory (RRAM) cell includes a substrate, a transistor having a gate on the substrate and a source/drain region in the substrate, a first inter-layer dielectric layer covering the transistor, a contact plug disposed in the first inter-layer dielectric layer and landing on the source/drain region, a resistive material layer conformally covering a protruding upper end portion of the contact plug, and a top electrode on the resistive material layer.