The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Apr. 19, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 23/535 (2013.01); H01L 27/092 (2013.01); H01L 27/1203 (2013.01); H01L 29/66484 (2013.01); H01L 29/7831 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region and the substrate includes a semiconductor layer on top of an insulating layer; forming a first front gate on the first region of the substrate and a second front gate on the second region of the substrate; removing part of the insulating layer under the first front gate; forming a first back gate on the insulating layer under the first front gate; and forming a second back gate under the second front gate.