The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
May. 18, 2016
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Shao-Chang Huang, Hsinchu, TW;
Chun-Chien Tsai, Jhubei, TW;
Yeh-Ning Jou, Hsinchu, TW;
Geeng-Lih Lin, Jhudong Township, Hsinchu County, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes a first metal-oxide-semiconductor (MOS) transistor, a second MOS transistor, and a third MOS transistor. The first MOS transistor is coupled between a power terminal and a ground terminal. The first MOS transistor has a control electrode terminal coupled to a first node to receive a first signal. The second MOS transistor has a control electrode terminal and a first electrode terminal both coupled to the first node and a second electrode terminal coupled to a bulk of the first MOS transistor. The third MOS transistor has a control electrode terminal coupled to a second node to receive a second node, a first electrode terminal coupled to the first node, and a second electrode terminal coupled to the bulk of the first MOS transistor. The first signal is inverse to the second signal.