The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

May. 22, 2017
Applicant:

Alpha and Omega Semiconductor (Cayman) Ltd., Sunnyvale, CA (US);

Inventors:

Zhiqiang Niu, Santa Clara, CA (US);

Bum-Seok Suh, Seongnam, KR;

Jun Lu, San Jose, CA (US);

Wonjin Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H05K 1/14 (2006.01); H05K 3/32 (2006.01); H05K 3/30 (2006.01); H05K 3/34 (2006.01); H01L 23/50 (2006.01); H01L 23/528 (2006.01); H01L 25/07 (2006.01); H01L 25/16 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49503 (2013.01); H01L 23/50 (2013.01); H01L 23/5286 (2013.01); H01L 25/07 (2013.01); H01L 25/16 (2013.01); H01L 25/18 (2013.01); H05K 1/145 (2013.01); H05K 3/308 (2013.01); H05K 3/32 (2013.01); H05K 3/3421 (2013.01); H01L 2224/01 (2013.01); H01L 2924/13091 (2013.01);
Abstract

An intelligent power module (IPM) has a first, second, third and fourth die paddles, a first, second, third, fourth, fifth and sixth metal-oxide-semiconductor field-effect transistors (MOSFETs), a tie bar, an IC, a plurality of leads and a molding encapsulation. The first MOSFET is attached to the first die paddle. The second MOSFET is attached to the second die paddle. The third MOSFET is attached to the third die paddle. The fourth, fifth and sixth MOSFETs are attached to the fourth die paddle. The IC is attached to the tie bar. The molding encapsulation encloses the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth MOSFETs, the tie bar and the IC. The IPM is a small-outline package. It reduces system design time and improves reliability. The IC includes boost diodes. It reduces a package size of the IPM.


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