The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Feb. 12, 2015
Infineon Technologies Austria Ag, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
In an embodiment, a semiconductor device includes a substrate, a Group III nitride-based semiconductor layer formed on the substrate, a first current electrode and a second current electrode formed on the Group III nitride-based semiconductor layer and spaced from each other, and a control electrode formed on the Group III nitride-based semiconductor layer between the first current electrode and the second current electrode. The control electrode includes at least a middle portion, configured to switch off a channel below the middle portion when a first voltage is applied to the control electrode, and second portions adjoining the middle portion. The second portions are configured to switch off a channel below the second portions when a second voltage is applied to the control electrode, the second voltage being less than the first voltage and the second voltage being less than a threshold voltage of the second portions.