The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Apr. 25, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a dielectric layer and a floating gate. The dielectric layer disposed on the substrate. The floating gate disposed on the dielectric layer. After a first programming process, the floating gate is configured to store first electrons that are to be combined with ions from the dielectric layer. After a second programming process, the floating gate is configured to store second electrons, and a number of the second electrons is larger than a number of the first electrons.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile