The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Mar. 13, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Kenji Suzuki, Tokyo, JP;
Atsushi Narazaki, Tokyo, JP;
Ryu Kamibaba, Tokyo, JP;
Yusuke Fukada, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A p-type base layer () is formed on a surface of an n-type silicon substrate (). First and second n-type buffer layers ()are formed on a back surface of the n-type silicon substrate (). The first n-type buffer layer () is formed by a plurality of implantations of protons at different accelerating voltages and has a plurality of peak concentrations with different depths from the back surface of the n-type silicon substrate (). The second n-type buffer layer () is formed by an implantation of a phosphorus. A position of a peak concentration of the phosphorus is shallower from the back surface of the n-type silicon substrate () than positions of peak concentrations of the protons. The peak concentration of the phosphorus is higher than the peak concentrations of the protons. A concentration of the protons is higher than a concentration of the phosphorus at the positions of the peak concentrations of the protons.