The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Jul. 31, 2014
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventors:

Naveen Muralimanohar, Santa Clara, CA (US);

Erik Ordentlich, San Jose, CA (US);

Cong Xu, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01); G11C 7/10 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0638 (2013.01); G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G11C 7/1012 (2013.01); G11C 13/0069 (2013.01); G11C 2213/77 (2013.01);
Abstract

In an example, in a method for encoding data within a crossbar memory array containing cells, bits of input data may be received. The received bits of data may be mapped to the cells in a row of the memory array, in which the cells are to be assigned to one of a low resistance state and a high resistance state. A subset of the mapped bits in the row may be grouped into a word pattern. The word pattern may be arranged such that more low resistance states are mapped to cells that are located closer to a voltage source of the row of the memory array than to cells that are located farther away from the voltage source.


Find Patent Forward Citations

Loading…