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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10175575 B1

PDFFull Text
Date of Patent:
Jan. 08, 2019

Filed:

Jun. 01, 2016

Pattern-forming method and composition

Applicant:

Jsr Corporation, Minato-ku, JP;

Inventor:

Hitoshi Osaki, Tokyo, JP;

Assignee:

JSR CORPORATION, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
G03F 7/00 (2006.01); C09D 133/06 (2006.01); G03F 7/038 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); C09D 133/04 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); C09D 133/04 (2013.01); C09D 133/062 (2013.01); G03F 7/038 (2013.01); G03F 7/0397 (2013.01); G03F 7/40 (2013.01); G03F 7/405 (2013.01); H01L 21/0271 (2013.01); H01L 21/0273 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract

A pattern-forming method includes forming a base pattern including a first polymer on a front face side. A composition is applied on at least a lateral face of the base pattern. The composition includes at least one polymer that is capable of interacting with the first polymer. The composition is heated such that a portion of the at least one polymer interacts with the first polymer and that a coating film is formed on the lateral face of the base pattern. Another portion of the at least one polymer not having interacted with the first polymer is removed to form a resist pattern. The base pattern in a planar view has a shape with a long axis and a short axis, and a ratio of lengths of the long axis to the short axis is no less than 1.5 and no greater than 10.

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