The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Oct. 16, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Russell T. Herrin, Essex Junction, VT (US);

Christopher V. Jahnes, Upper Saddle River, NJ (US);

Anthony K. Stamper, Williston, VT (US);

Eric J. White, Charlotte, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81B 3/00 (2006.01); H01L 41/113 (2006.01); B81C 1/00 (2006.01); H01H 57/00 (2006.01); G06F 17/50 (2006.01); H01H 1/00 (2006.01); H01H 59/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0072 (2013.01); B81B 3/0021 (2013.01); B81C 1/0015 (2013.01); B81C 1/00365 (2013.01); B81C 1/00476 (2013.01); B81C 1/00619 (2013.01); B81C 1/00626 (2013.01); B81C 1/00666 (2013.01); G06F 17/5068 (2013.01); G06F 17/5072 (2013.01); H01H 1/0036 (2013.01); H01H 57/00 (2013.01); H01H 59/0009 (2013.01); H01L 41/1136 (2013.01); B81B 2201/01 (2013.01); B81B 2201/014 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); B81C 2201/013 (2013.01); B81C 2201/017 (2013.01); B81C 2201/0109 (2013.01); B81C 2201/0167 (2013.01); B81C 2203/0136 (2013.01); B81C 2203/0172 (2013.01); H01H 2057/006 (2013.01); H01L 2924/0002 (2013.01); Y10S 438/937 (2013.01); Y10T 29/42 (2015.01); Y10T 29/435 (2015.01); Y10T 29/49002 (2015.01); Y10T 29/4913 (2015.01); Y10T 29/49105 (2015.01); Y10T 29/49121 (2015.01); Y10T 29/49126 (2015.01); Y10T 29/49155 (2015.01); Y10T 29/5313 (2015.01);
Abstract

A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.


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