The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Dec. 19, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Greja Johanna Adriana Maria Verheijden, Riethoven, NL;
Roel Daamen, Herkenbosch, NL;
Gerhard Koops, Aalst, BE;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/84 (2006.01); H01L 21/50 (2006.01); B81C 1/00 (2006.01); H02N 1/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H02N 1/00 (2013.01); B81C 1/00476 (2013.01); H01L 21/02 (2013.01); H01L 21/02126 (2013.01); H01L 21/31116 (2013.01); H01L 21/50 (2013.01); H01L 21/7688 (2013.01); H01L 29/84 (2013.01);
Abstract
A method includes providing a substrate having a first sacrificial oxide region, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region. The method further includes covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluoric acid (HF) etchant and selectively etching the first sacrificial oxide region through the first porous layer using the vapor HF etchant.