The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Jan. 17, 2018
Robert Bosch Gmbh, Stuttgart, DE;
Akustica, Inc., Pittsburgh, PA (US);
Milap J. Dalal, Pittsburgh, PA (US);
Matthew A. Zeleznik, Pittsburgh, PA (US);
Akustica, Inc., Pittsburgh, PA (US);
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A bi-directional charge pump cell includes a p-type substrate having a main surface. A first n-well is formed in the p-type substrate that includes n+ doped regions formed in the first n− well at the main surface. A first p-well is formed in the first n− well that includes p+ doped regions formed in the first p-well at the main surface. A second n-well is formed in the first p-well that includes n+ doped regions and PMOS transistors formed at the main surface. A second p-well is formed in the first n-well that includes p+ doped regions at the main surface. A third p-well is defined in the second p-well that includes p+ doped regions and NMOS transistors at the main surface.