The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Jan. 23, 2017
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;
Kwang Soo Lee, Gwangmyeong-si, KR;
Shin Hyuk Yang, Seongman-si, KR;
Doo Hyun Kim, Goyang-si, KR;
Jee Hoon Kim, Cheonan-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;
Abstract
A transistor panel includes a channel region including an oxide of a first metal, a source region and a drain region, each including the first metal, wherein the channel region is disposed between the source and drain regions, and wherein the channel region is connected to the source and drain regions, an insulation layer disposed on the channel region, an upper electrode disposed on the insulation layer, an interlayer insulation layer disposed on the upper electrode, the source region and the drain region, and a barrier layer including a first portion disposed between the interlayer insulation layer and each of the source and drain regions, wherein the first portion of the barrier layer contacts each of the source and drain regions. The upper electrode and the barrier layer each comprise a second metal.