The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
May. 19, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Han-Chin Chiu, Kaohsiung, TW;
Cheng-Yuan Tsai, Hsin-Chu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 23/29 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 23/291 (2013.01); H01L 29/2003 (2013.01); H01L 29/42376 (2013.01); H01L 29/513 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/41766 (2013.01); H01L 29/518 (2013.01);
Abstract
A High Electron Mobility Transistor (HEMT) and a method of forming the same are disclosed. The HEMT includes a first III-V compound layer having a first band gap and a second III-V compound layer having a second band gap over the first III-V compound layer, wherein the second band gap is greater than the first band gap. The HEMT further includes a first oxide layer over the second III-V compound layer; a first interfacial layer over the first oxide layer; and a passivation layer over the first interfacial layer.