The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Oct. 12, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Ting Chiang, Kaohsiung, TW;
Jie-Ning Yang, Pingtung County, TW;
Chi-Ju Lee, Tainan, TW;
Chih-Wei Lin, Kaohsiung, TW;
Bo-Yu Su, Tainan, TW;
Yen-Liang Wu, Taipei, TW;
I-Fan Chang, Hsinchu, TW;
Jui-Ming Yang, Taichung, TW;
Wen-Tsung Chang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate, a metal gate on the substrate, and a first inter-layer dielectric (ILD) layer around the metal gate. A top surface of the metal gate is lower than a top surface of the ILD layer thereby forming a recessed region atop the metal gate. A mask layer is disposed in the recessed region. A void is formed in the mask layer within the recessed region. A second ILD layer is disposed on the mask layer and the first ILD layer. A contact hole extends into the second ILD layer and the mask layer. The contact hole exposes the top surface of the metal gate and communicates with the void. A conductive layer is disposed in the contact hole and the void.