The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Jun. 19, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Renata Camillo-Castillo, Portland, OR (US);
Qizhi Liu, Lexington, MA (US);
John J. Pekarik, Underhill, VT (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/732 (2006.01); H01L 21/306 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0821 (2013.01); H01L 21/30608 (2013.01); H01L 29/0653 (2013.01); H01L 29/0804 (2013.01); H01L 29/1004 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01); H01L 29/66272 (2013.01);
Abstract
Device structure and fabrication methods for a bipolar junction transistor. An emitter layer is formed on a base layer and etched to form an emitter of the device structure. The emitter layer has a concentration of an element that varies as a function of the thickness of the emitter layer. The etch rate of the emitter layer varies as a function of the concentration of the element such that the emitter has a variable width over the thickness of the emitter layer.