The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Jun. 19, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hung-Wen Hsu, Tainan, TW;

Yen-Shuo Su, Hsinchu County, TW;

Jiech-Fun Lu, Tainan County, TW;

Kuan Chih Huang, Tainan, TW;

Tze Yun Chou, Tainan, TW;

Chun-Mao Chiu, Kaohsiung, TW;

Tao-Sheng Chang, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01L 21/76829 (2013.01); H01L 23/3171 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract

A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; a magnetic layer in the second passivation layer; and an etch stop layer between the magnetic layer and the first passivation layer, wherein the etch stop layer includes at least one acid resistant layer, and the acid resistant layer includes a metal oxide. A method for manufacturing a semiconductor structure is also disclosed.


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