The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Apr. 17, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Yueh-Chuan Lee, Hsinchu, TW;
Ta-Hsin Chen, Hsin-Chu, TW;
Chia-Chan Chen, Zhubei, TW;
Chih-Huang Li, Hsin-Chu, TW;
Ren-Jie Lin, Tainan, TW;
Jung-I Lin, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01);
Abstract
A method for forming an image sensor device on a substrate is disclosed. The method includes (a) recessing a portion of the substrate thereby forming a first shallow trench; (b) forming a spacer layer surrounding at least part of a sidewall of the first shallow trench; and (c) forming a first deep trench that extends below the first shallow trench by further recessing the substrate while using the spacer layer as a mask.