The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Feb. 17, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jung-Gun You, Ansan-si, KR;
Jeong-Hyo Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor device is provided as follows. Active fins protrude from a substrate, extending in a first direction. A first device isolation layer is disposed at a first side of the active fins. A second device isolation layer is disposed at a second side of the active fins. A top surface of the second device isolation layer is higher than a top surface of the first device isolation layer and the second side is opposite to the first side. A normal gate extends across the active fins in a second direction crossing the first direction. A first dummy gate extends across the active fins and the first device isolation layer in the second direction. A second dummy gate extends across the second device isolation layer in the second direction.