The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Aug. 04, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zihui Li, Santa Clara, CA (US);

Chia-Ling Kao, San Jose, CA (US);

Anchuan Wang, San Jose, CA (US);

Nitin K. Ingle, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 29/40 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32137 (2013.01); H01L 21/02123 (2013.01); H01L 21/02252 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01);
Abstract

Embodiments of the present technology may include a method of etching. The method may include flowing a gas through a plasma to form plasma effluents. The method may also include reacting plasma effluents with a first layer defining a first feature. The first feature may include a first sidewall, a second sidewall, and a bottom. The first sidewall, the second sidewall, and the bottom may include the first layer. The first layer may be characterized by a first thickness on the sidewall. The method may further include forming a second layer from the reaction of the plasma effluents with the first layer. The first layer may be replaced by the second layer. The second layer may be characterized by a second thickness. The second thickness may be greater than or equal to the first thickness. The method may also include removing the second layer to expose a third layer.


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