The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

May. 02, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chien-An Lai, Hsin-chu, TW;

Joseph Wu, Hsin-Chu, TW;

Wen-Yu Ku, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/42 (2006.01); H01L 21/223 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2236 (2013.01); H01J 37/32009 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01J 2237/334 (2013.01);
Abstract

Systems and methods for improving doping and/or deposition uniformity using a tunable electromagnetic field generation device are provided. In an exemplary embodiment, the system includes a chamber configured to contain a semiconductor wafer, a plasma generator, and a gas inlet, and an exhaust gas outlet. The gas inlet permits a controlled flow of a gas into the chamber through a wall of the chamber and the exhaust gas outlet permits exhausting of gas from the chamber. The system further includes a wafer support structure configured to support the semiconductor wafer during a doping or deposition process and an electromagnetic structure positioned within the chamber and at least partially surrounding an upper surface of the wafer support structure.


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