The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Dec. 27, 2011
Donald S. Gardner, Los Altos, CA (US);
Cary L. Pint, Hayward, CA (US);
Charles W. Holzwarth, San Jose, CA (US);
Wei Jin, Sunnyvale, CA (US);
Zhaohui Chen, San Jose, CA (US);
Yang Liu, State College, PA (US);
Eric C. Hannah, Pebble Beach, CA (US);
John L. Gustafson, Pleasanton, CA (US);
Donald S. Gardner, Los Altos, CA (US);
Cary L. Pint, Hayward, CA (US);
Charles W. Holzwarth, San Jose, CA (US);
Wei Jin, Sunnyvale, CA (US);
Zhaohui Chen, San Jose, CA (US);
Yang Liu, State College, PA (US);
Eric C. Hannah, Pebble Beach, CA (US);
John L. Gustafson, Pleasanton, CA (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.