The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Feb. 28, 2017
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Sebastian Schafer, Fremont, CA (US);
Dmytro Apalkov, San Jose, CA (US);
Vladimir Nikitin, Campbell, CA (US);
Don Koun Lee, San Jose, CA (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack. The magnetic junction is annealed at an anneal temperature not less than the crystallization temperature after the step of patterning the magnetoresistive stack.