The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Mar. 31, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ching-Chung Su, Tainan, TW;

Hung-Wen Hsu, Tainan, TW;

Wei-Chuang Wu, Tainan, TW;

Wei-Lin Chen, Hsinchu, TW;

Jiech-Fun Lu, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 21/00 (2006.01); H01L 33/46 (2010.01); H01L 27/146 (2006.01); H01L 31/056 (2014.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 27/14629 (2013.01); H01L 27/14643 (2013.01); H01L 27/14868 (2013.01); H01L 31/056 (2014.12);
Abstract

Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.


Find Patent Forward Citations

Loading…