The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Aug. 03, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Chia-Fu Hsu, Tainan, TW;
Chun-Mao Chiou, Chiayi County, TW;
Shih-Chieh Hsu, New Taipei, TW;
Lung-En Kuo, Tainan, TW;
You-Di Jhang, New Taipei, TW;
Jian-Cun Ke, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes an interfacial layer on a substrate and agate structure on the interfacial layer. Preferably, the gate structure includes a patterned high-k dielectric layer, the patterned high-k dielectric layer comprises a metal oxide layer, and a horizontal direction width of the patterned high-k dielectric layer and a horizontal direction width of the interfacial layer are different. The semiconductor device also includes a first spacer adjacent to the gate structure and on part of the interfacial layer and contacting a top surface of the interfacial layer and a second spacer on the sidewalls of the first spacer and the interfacial layer. Preferably, a planar bottom surface of the second spacer is lower than a planar bottom surface of the first spacer and extending along a same direction as the planar bottom surface of the first spacer.