The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Dec. 01, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Tung Ying Lee, Hsin-Chu, TW;
Chih Chieh Yeh, Taipei, TW;
Jeng-Ya David Yeh, New Taipei, TW;
Yuan-Hung Chiu, Taipei, TW;
Chi-Wen Liu, Hsin-Chu, TW;
Yee-Chia Yeo, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/045 (2013.01); H01L 29/0676 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device and a method of forming the semiconductor device is disclosed. A sacrificial film is used to pattern a contact to a semiconductor structure, such as a contact to a source/drain region of a transistor. The contact may include a tapered profile along an axis parallel to the gate electrode such that an outermost width of the contact decreases as the contact extends away from the source/drain region.