The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Apr. 06, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hung-Wen Hsu, Tainan, TW;

Jung-I Lin, Hsinchu, TW;

Ching-Chung Su, Tainan, TW;

Jiech-Fun Lu, Tainan County, TW;

Yeur-Luen Tu, Taichung, TW;

Chia-Shiung Tsai, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14685 (2013.01); H01L 27/1464 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01);
Abstract

A method of forming a semiconductor image sensing device includes: providing a semiconductor substrate; forming a radiation sensitive region and a peripheral region in the semiconductor substrate, wherein the peripheral region surrounds the radiation sensitive region and includes a top surface projected from a backside of the semiconductor substrate and a sidewall coplanar with a sidewall of the semiconductor substrate and perpendicular to the top surface; forming a photon blocking spacer in the peripheral region, wherein the photon blocking spacer covers a portion of the sidewall of the peripheral region; and forming an anti reflective coating adjacent to the photon blocking layer.


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