The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Apr. 11, 2016
Omnivision Technologies, Inc., Santa Clara, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A trenched device wafer includes a device substrate layer having a top surface; a plurality of devices in the device substrate layer, and a trench in the top surface. The trench extends into the device substrate layer, and is located between a pair of adjacent devices of the plurality of devices. A method for forming a device die from a device wafer includes forming a trench in a top surface of the device wafer between two adjacent devices of the device wafer. The trench has a bottom surface located (a) at a first depth beneath the top surface and (b) at a first height above a wafer bottom surface. The method also includes, after forming the trench, decreasing a thickness of the device wafer, between the two adjacent devices, to a thickness less than the first height.